姓名

齐景山

性别

男

出生年月

1981.04

学历学位

博士

职称

教授

导师类型

学术型硕导

电话

Email

qijingshan@email.tjut.edu.cn

办公室

10-218

所属学科

物理学

研究

方向

1. 自旋电子学和谷电子学

2. 铁电、铁磁和多铁

3. 非线性光学效应

讲授课程： 固体物理，热学，大学物理

主要项目及代表性成果(包括鉴定项目、论文、专著、获奖、专利等)：

项目:

1. 国家自然科学基金面上项目“新型二维类CuMP2X6结构多铁材料的磁电耦合效应与界面调控”，主持。

2. 国家自然科学基金面上项目“二维材料中谷与自旋自由度的耦合效应及其电磁调控”，主持。

3. 国家自然科学基金青年项目“弹性应变下原子薄膜的电子结构和输运性质的理论和计算研究”，主持。

论文:  

1. Wen Dang, Mengyu Zhu, Ziye Zhu, Xiaofang Chen,   Zhigang Song, Jingshan Qi, Electric-Field-Tunable Spin Polarization   and Carrier-Transport Anisotropy in an A-Type Antiferromagnetic van der Waals   Bilayer, Physical Review Applied 18(6), 064086(2022).

2. Xunkai Duan, Hua Wang, Xiaofang Chen and Jingshan   Qi, Multiple polarization phases and strong magnetoelectric coupling in   the layered transition metal phosphorus chalcogenides TMP2X6 (T=Cu, Ag;   M=Cr, V; X=S, Se) by controlling the interlayer interaction and   dimension, Physical   Review B, 106(11),   115403(2022).

3. Dier Feng, Ziye Zhu, Xiaofang Chen and Jingshan   Qi, Electric-polarization-driven magnetic phase transition in a   ferroelectric–ferromagnetic heterostructure, Applied Physics Letters 118 (6), 062903 (2021).

4. Yechen Xun, Ziye Zhu, Xiaofang Chen and Jingshan   Qi, One-dimensional ferromagnetic semiconductor CrSbSe₃ with   high Curie temperature and large magnetic anisotropy, Physical Review B,   104(8), 085429(2021).

5. Ziye Zhu, Xiaofang Chen, Wenbin Li and Jingshan   Qi, Controllable   magnetism driven by carrier confinement and ferroelectric polarization in a two-dimensional   heterostructure, Journal of Materials Chemistry C 8(48), 17342-17348 (2020).

6. Ziye Zhu, Baiyu Zhang, Xiaofang Chen, Xiaofeng Qian   and Jingshan Qi, Electric Field Control of Molecular Magnetic State by   Two Dimensional Ferroelectric Heterostructure Engineering, Applied Physics   Letters 117 (8), 08290 (2020).

7. Hua Wang, Jingshan Qi, and Xiaofeng   Qian. Electrically-Tunable High Curie Temperature   Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals, Applied   Physics Letters 117(8), 083102 (2020).

8. Ziye Zhu, Xiaofang Chen, Wenbin Li and Jingshan   Qi, Electric field control of the semiconductor-metaltransition in two   dimensional CuInP2S6/germanene van der Waals heterostructure, Applied Physics   Letters 114(22), 223102 (2019). 

9. Jingshan Qi, Kaige Hu and Xiao Li, Electric Control of the Edge   Magnetization in Zigzag Stanene Nanoribbons from First Principles, Physical   Review Applied 10 (3), 034048 (2018). 

10. Jingshan Qi, Hua Wang, Xiaofang Chen, and Xiaofeng   Qian. Two-dimensional multiferroic   semiconductors with coexisting ferroelectricity and ferromagnetism. Applied   Physics Letters 113(4), 043102 (2018). 

11. Yi-Wen Wei, Chao-Kai Li, Jingshan Qi and Ji   Feng, Magnetoconductivity   of type-II Weyl semimetals, Physical Review B 97,   205131 (2018).

12. Liangshuai Zhong, Xiaofang Chen and Jingshan Qi,   Controlling the spin and valley degeneracy splitting in monolayer MnPSe3 by   atom doping, Physical Chemistry Chemical Physics, 19(23), 15388-15393   (2017).   

13. Xiaofang Chen, Liangshuai Zhong, Xiao Li and Jingshan   Qi, Valley splitting in the transition-metal   dichalcogenide monolayer via atom adsorption, Nanoscale 9(6),   2188-2194 (2017).  

14. Wenbin Li, Lei Sun, Jingshan Qi, Pablo Jarillo-Herrero,   Mircea Dincă and   Ju Li,  High   temperature ferromagnetism in π-conjugated two-dimensional metal–organic   frameworks, Chemical Science, 8(4), 2859-2867 (2017).

15. Jingshan Qi, Xiao Li, Xiaofeng Qian, Electrically controlled   band gap and topological phase transition in two-dimensional multilayer   germanane, Applied Physics Letters 108(25), 253107 (2016).   

16. Jingshan Qi，Xiaofang Chen，Kaige Hu   and Ji Feng，Graphene-based half-metal and   spin-semiconductor for spintronic application，Journal   of Physics: Condensed Matter, 28(12),126004 (2016).  

17. Sha Wu, Wengang Lu, Jingshan Qi, Spin-charge   order and excitonic effects in sawtooth-like graphene nanoribbons, Physics   Letters A 380(38), 3092 (2016).

18. Feipeng Zheng, Chaoyi Cai, Shaofeng Ge, Xuefeng   Zhang, Xin Liu, Hong Lu, Yudao Zhang, Jun Qiu, Takashi Taniguchi, Kenji   Watanabe, Shuang Jia, Jingshan Qi, Jian-Hao Chen, Dong Sun, and Ji   Feng, On the Quantum Spin Hall Gap of Monolayer 1T′-WTe2, Advanced   Materials, 28,4845-4851(2016).

19. Jingshan Qi, Xiao Li, Qian Niu and Ji Feng, Giant and tunable valley degeneracy   splitting in MoTe₂, Physical Review B, 92(12), 121403(2015).  

20. Xiaofang Chen, Jingshan Qi and Daning Shi, Strain-engineering   of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe3:   competition of direct exchange interaction and superexchange interaction, Physics   Letters A, 379(1),60 (2015).

21. Baisheng Sa, Yanling Li, Zhimei Sun, Jingshan Qi,   Cuilian Wen and Bo Wu, The electronic origin of   shear-induced direct to indirect gap transition and anisotropy diminution in   phosphorene, Nanotechnology, 26(21), 215205 (2015).

22. Jingshan Qi, Xiao Li, Xiaofang Chen and Kaige Hu, Strain tuning   of magnetism in Mn doped MoS2 monolayer, Journal of Physics: Condensed   Matter, 26(25), 256003 (2014).

23. Baisheng Sa, Yan-Ling Li, Jingshan Qi, Rajeev   Ahuja, Zhimei Sun, Strain engineering for   phosphorene: the potential application as a photocatalyst, The   Journal of Physical Chemistry C, 118(46), 26560-26568 (2014).

24. Jingshan Qi, Xiao Li, Xiaofeng Qian,and Ji Feng, Bandgap   engineering of rippled MoS2 monolayer under external electric field, Applied   Physics Letters, 102(17), 173112 (2013).   

25. Jingshan Qi, Xiaofeng Qian, Liang Qi, Ji Feng, Daning Shi and Ju   Li, Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride   Nanoribbons, Nano Letters, 12(3), 1224-1228 (2012). 

26. Ji Feng, Wenbin Li, Xiaofeng Qian, Jingshan Qi,   Liang Qi and Ju Li, Patterning of graphene, Nanoscale, 4(16),   4883-4899 (2012).

27. Jingshan Qi, Jianyu Huang, Ji Feng, Daning Shi and Ju Li, The Possibility   of Chemically Inert, Graphene-Based All-carbon Electronic Devices with 0.8 eV   Gap, ACS Nano, 5(5), 3475-3482 (2011).

28. Hongxia Chen, Daning Shi and Jingshan Qi, Comparative   Studies on The Magnetic Properties of ZnS Nanowires Doped with Transition Metal   Atoms, Journal of Applied Physics, 109(8), 084338 (2011).

29. Caixia Kan, Changshun Wang, Hongchen Li, Jingshan   Qi, Jiejun Zhu, Zhaosheng Li and Daning Shi, Gold microplates with   well-defined shapes, Small, 6, 1768-1775 (2010). 

30. Jingshan Qi, Hailin Yu, Xufan Jiang and Daning Shi, First   principles study of Electronic Strucutre and Magnetic Properties of   Half-Metallic Full-Heusler Alloys Co2MnSi and Co2FeSi, International   Journal of Modern Physics B, 24(8), 967-978 (2010).

31. Jingshan Qi, Daning Shi, Hongxia Chen and Baolin Wang, Stuctures and Electronic Properties of   The Bi-Sb Superlattice Nanowires and Core-Shell Structural Bi/Bb Nanowires, The Journal of Physical Chemistry C, 113(26),   11358-11365 (2009).

32. Jingshan Qi, Daning Shi, Baolin Wang, Different Mechanical   Properties of The Pristine and Hydrogen Passivated ZnO Nanowires, Computational   Materials Science, 46(2), 303-306 (2009).

33. Jingshan Qi, Daning Shi and Jianming Jia, First-Principles Studies of The   Electronic and Mechanical Properties of ZnO Nanobelts with Different Dominant   Surfaces, Nanotechnology, 19(43), 435707 (2008).

34. Jingshan   Qi, Daning Shi, Jijun   Zhao and Xuefan Jiang, Stable Structures and Electronic Properties of The   Oriented Bi Nanowires and Nanotubes from First-Principle Calculations, The Journal of Physical Chemistry C, 112(29), 10745-10753 (2008).

35. Jingshan   Qi, Daning Shi and   Xuefan Jiang, The Structures and Electronic   Properties of Double-Wall Bismuth Nanotubes from First-Principle Calculations,   Chemical Physics Letters, 460(1-3), 266-271 (2008).